PART |
Description |
Maker |
STW5NA100 5367 STH5NA100FI STH5NA100 |
OLD PRODUCT: NOT SUITABLE FOR NEW DESIGN-IN N - CHANNEL ENHANCEMENT MODE, POWER MOS TRANSISTORS N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS From old datasheet system N-Channel Enhancement Mode Power MOS Transistors(N沟道增强模式快速功率MOS晶体 N沟道增强模式功率MOS晶体管(不适用沟道增强模式快速功率马鞍山晶体管)
|
ST Microelectronics SGS Thomson Microelectronics STMICROELECTRONICS[STMicroelectronics] STMicroelectronics N.V.
|
STE36N50-DA |
N-CHANNEL ENHANCEMENT MODE POWERMOS TRANSISTORANDULTRA-FAST DIODEINISOTOPPACKAGE N-Channel Enhancement Mode Power MOS Transistor and Ultra-Fast Diode in Isotop Package
|
STMicroelectronics ST Microelectronics
|
APM3095PUC-TU APM3095PUC-TUL APM3095PUC-TRL |
P-Channel Enhancement Mode MOSFET 3000 mA, 30 V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-252 P-Channel Enhancement Mode MOSFET P沟道增强型MOS
|
Anpec Electronics Corporation Anpec Electronics, Corp.
|
NDH8320C |
Dual N & P-Channel Enhancement Mode Field Effect Transistor(双N沟道和P沟道增强型场效应N沟道:漏电流3A, 漏源电压20V,导通电.06Ω;P沟道:漏电流-2A, 漏源电压-20V,导通电.13Ω 3000 mA, 20 V, 2 CHANNEL, N AND P-CHANNEL, Si, SMALL SIGNAL, MOSFET Dual N & P-Channel Enhancement Mode Field Effect Transistor
|
Fairchild Semiconductor, Corp. FAIRCHILD[Fairchild Semiconductor]
|
TN2010T |
N-Channel Enhancement-Mode MOSFET(最小漏源击穿电00V,夹断电.12AN沟道增强型MOSFET晶体 N-Channel Enhancement-Mode MOSFET Transistor
|
Vishay Intertechnology,Inc. ETC
|
APM2317AC-TRL |
P-Channel Enhancement Mode MOSFET 4500 mA, 20 V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET P-Channel Enhancement Mode MOSFET P沟道增强型MOS
|
Anpec Electronics, Corp.
|
BS250 70209 |
P-Channel Enhancement-Mode MOSFET Transistor(最小漏源击穿电45V,夹断电0.18A的P沟道增强型MOSFET晶体 From old datasheet system P-Ch Enhancement-Mode MOSFET Transistors
|
Vishay Intertechnology,Inc.
|
ZXMN2B14FHTA ZXMN2B14FH |
20V N-CHANNEL ENHANCEMENT MODE MOSFET WITH LOW GATE DRIVE CAPABILITY 20V SOT23 N-channel enhancement mode MOSFET
|
Diodes Incorporated
|
APT1001RBLC APT1001RSLC APT1001 |
POWER MOS VI 1000V 11A 1.000 Ohm Power MOS VI is a new generation of low gate charge, high voltage N-Channel enhancement mode power MOSFETs Contact Gender:Pin; Circular Shell Style:Wall Mount Receptacle; Insert Arrangement:25-4 RoHS Compliant: No Power MOS VI is a new generation of low gate charge/ high voltage N-Channel enhancement mode power MOSFETs N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS
|
ADPOW[Advanced Power Technology] Advanced Power Technology Ltd.
|
STP2N60FI STP2N60 3137 |
N-Channel Enhancement Mode Power MOS Transistor(N沟道增强模式功率MOSFET) N沟道增强模式功率MOS晶体管(不适用沟道增强模式功率MOSFET的) N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR From old datasheet system
|
STMicroelectronics N.V. STMICROELECTRONICS[STMicroelectronics]
|
APM9953KC-TU APM9953KC-TUL APM9953KC-TR APM9953KC- |
Dual P-Channel Enhancement Mode MOSFET 双P沟道增强型MOS Dual P-Channel Enhancement Mode MOSFET 3 A, 20 V, 0.1 ohm, 2 CHANNEL, P-CHANNEL, Si, POWER, MOSFET
|
Anpec Electronics Corporation Anpec Electronics, Corp.
|
ZVP4525Z ZVP4525ZTA ZVP4525ZTC |
250 V, P-channel enhancement mode MOSFET 250V P-CHANNEL ENHANCEMENT MODE MOSFET
|
ZETEX[Zetex Semiconductors]
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